Reduction of Capture Barrier Height of Pressure-Induced Deep Donors(DX Center)in GaAs:Si
- Author(s):
- Publication title:
- Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988
- Title of ser.:
- Materials science forum
- Ser. no.:
- 38-41
- Pub. Year:
- 1989
- Vol.:
- Part2
- Page(from):
- 851
- Page(to):
- 856
- Pub. info.:
- Aederlmannsdorf, Switzwelns: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878495849 [0878495843]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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