Cluster Ab Initio Calculation of the Localized Lattice Excitations due to Interstitial Oxygen in Silicon

Cluster Ab Initio Calculation of the Localized Lattice Excitations due to Interstitial Oxygen in Silicon

Author(s):

Publication title:

Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988

Title of ser.:

Materials science forum

Ser. no.:

38-41

Pub. Year:

1989

Vol.:

Part1

Page(from):

323

Page(to):

328

Pub. info.:

Aederlmannsdorf, Switzwelns: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878495849 [0878495843]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00017895
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconduotors : ICDS
Conf. info. (Number):	15th
Conf. info. (Venue):	Budapest, Hungary
Conf. info. (Date):	1988.08.22-1988.08.26

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