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One- and Two-Oxygen Defects in Silicon - A Theoretical Study

Author(s):
Publication title:
Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988
Title of ser.:
Materials science forum
Ser. no.:
38-41
Pub. Year:
1989
Vol.:
Part1
Page(from):
281
Page(to):
286
Pub. info.:
Aederlmannsdorf, Switzwelns: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878495849 [0878495843]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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