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Photoelectrical properties of nonuniform GaAs structures under infrared laser illumination

Author(s):
Asmontas,S.P. ( Semiconductor Physics Institute(Lithuania) )
Gradauskas,J. ( Semiconductor Physics Institute(Lithuania) )
Seliuta,D. ( Semiconductor Physics Institute(Lithuania) )
Silenas,A. ( Semiconductor Physics Institute(Lithuania) )
Sirmulis,E. ( Institute of Physics(Lithuania) )
Marmur,I.Ya. ( S.I.Vavilov,.State Optical Institute(Russia) )
1 more
Publication title:
Nonresonant laser-matter interaction (NLMI-9) : 1-3 July, 1996, St. Petersburg-Pushkin, Russia
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3093
Pub. Year:
1997
Page(from):
35
Page(to):
40
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819425089 [0819425087]
Language:
English
Call no.:
P63600/3093
Type:
Conference Proceedings

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