Reducing or eliminating line-end shortening and iso/dense bias by tuning NA and sigma

Reducing or eliminating line-end shortening and iso/dense bias by tuning NA and sigma

Author(s):

Toublan,O. ( France Telecom CNET )
Schiavone,P. ( France Telecom CNET )

Publication title:

Optical microlithography XI : 25-27 February 1998, Santa Clara, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3334

Pub. Year:

1998

Page(from):

912

Page(to):

920

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819427793 [0819427799]

Language:

English

Call no.:

P63600/3334

Type:

Conference Proceedings

Details

TDL ID:	ZA00017855
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Optical Microlithography
Conf. info. (Number):	1998 : 11th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	1998.02.25-1998.02.27

Similar Items:

1 Conference Proceedings Effects of laser bandwidth on iso-dense bias and line end shortening at sub-micron process nodes R. C. Peng, A. K. Yang, L. J. Chen, Y. W. Guo, H. H. Liu, J. Lin, A. Chang SPIE - The International Society of Optical Engineering	7 Conference Proceedings Understanding of the depth of focus evolution from an analysis of the iso-focal point Manakli, S., Trouiller, Y., Schiavone, P. SPIE - The International Society of Optical Engineering
2 Conference Proceedings Extending the limits of i-line lithography for via layers and minimization of dense-iso bias Subramanian,R., Spence,C.A., Capodieci,L., Werner,T., Gallardo,E. SPIE - The International Society for Optical Engineering	8 Conference Proceedings ISO spectroscopy of dense regions Cox, P. ESA Publications Division
3 Conference Proceedings Experimental study of line-end shortening Shi, X., Socha, R. J., Bendik, J., Dusa, M. V., Conley, W., Su, B. SPIE - The International Society of Optical Engineering	9 Conference Proceedings Minimization of the iso-dense bias in chemically amplified 193-nm positive resists:influence and monitoring of the diffusion well Mortini,B.P., Gally,S., Sassoulas,P.-O., Prola,A., Paniez,P.J. SPIE - The International Society for Optical Engineering
4 Conference Proceedings Mechanistic understanding of line-end shortening Stewart,M.D., Schmid,G.M., Postnikov,S.V., Willson,C.G. SPIE-The International Society for Optical Engineering	10 Conference Proceedings Illumination spectral width impacts on mask error enhancement factor and iso-dense bias in 0.6-NA KrF imaging Lalovic,I., Kroyan,A., Zambon,P., Silsby,C.D., Farrar,N. SPIE-The International Society for Optical Engineering
5 Conference Proceedings Corner rounding and line-end shortening in optical lithography Mack,C.A. SPIE-The International Society for Optical Engineering	11 Conference Proceedings A systematic study of process windows and MEF for line end shortening under various photo conditions for more effective and robust OPC correction [6154-151] Wu, Q., Zhu, J., Wu, P., Jiang, Y. SPIE - The International Society of Optical Engineering
6 Conference Proceedings Flare impact on the intrafield CD control for sub-0.25-ｦﾌm patterning Luce,E., Minghetti,B., Schiavone,P., Toublan,O., Weill,A.P. SPIE - The International Society for Optical Engineering	12 Conference Proceedings Diffusion contributions to line end shortening in 193-nm photolithography Eun-Kyung Son, Jung-Woo Kim, Sang-Hyang Lee, Chan-Sik Park, Jae-Woo Lee, Jaehyun Kim, Geun-Su Lee, Sung-Koo Lee, Keun-Do … SPIE - The International Society of Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12