Blank Cover Image

ArF excimer laser lithography with bottom antireflective coating

Author(s):
Kishimura,S. ( Association of Super-Advanced Electronics Technologies (Japan) )
Takahashi,M. ( Association of Super-Advanced Electronics Technologies (Japan) )
Nakazawa,K. ( Association of Super-Advanced Electronics Technologies (Japan) )
Ohfuji,T. ( Association of Super-Advanced Electronics Technologies (Japan) )
Sasago,M. ( Association of Super-Advanced Electronics Technologies (Japan) )
Uematsu,M. ( Semiconductor Leading Edge Technologies,Inc. (Japan) )
Ogawa,T. ( Semiconductor Leading Edge Technologies,Inc. (Japan) )
Ohtsuka,H. ( Semiconductor Leading Edge Technologies,Inc. (Japan) )
3 more
Publication title:
Optical microlithography XI : 25-27 February 1998, Santa Clara, California
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3334
Pub. Year:
1998
Page(from):
310
Page(to):
321
Pub. info.:
Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819427793 [0819427799]
Language:
English
Call no.:
P63600/3334
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Negative-type chemically amplified resists for ArF excimer laser lithography

Naito,T., Takahashi,M., Ohfuji,T., Sasago,M.

SPIE-The International Society for Optical Engineering
7 Conference Proceedings Prospects and challenges of ArF excimer laser lithography(Invited Paper)

Sasago,M.

SPIE-The International Society for Optical Engineering
2 Conference Proceedings Dry etching resistance of methacrylate polymers for ArF excimer laser lithography

Ohfuji,T., Endo,M., Takahashi,M., Naito,T., Tatsumi,T., Kuhara,K., Sasago,M.

SPIE-The International Society for Optical Engineering
8 Conference Proceedings Dissolution behavior of alicyclic polymers designed for ArF excimer laser lithography

Ohfuji,T., Maeda,K., Nakano,K., Hasegawa,E.

SPIE-The International Society for Optical Engineering
3 Conference Proceedings Acid amplification of chemically amplified resists for 193-nm lithography

Ohfuji,T., Takahashi,M., Kuhara,K., Ogawa,T., Ohtsuka,H., Sasago,M., Ichimura,K.

SPIE-The International Society for Optical Engineering
9 Conference Proceedings Recent advantages of bilevel resists based on silsesquioxane for ArF lithography

Morisawa,T., Matsuzawa,N.N., Mori,S., Kaimoto,Y., Endo,M., Ohfuji,T., Kuhara,K., Sasago,M.

SPIE-The International Society for Optical Engineering
4 Conference Proceedings Effect of the dissolution contrast on the process margin in 193-nm lithography

Takahashi,M., Kishimura,S., Naito,T., Ohfuji,T., Sasago,M.

SPIE-The International Society for Optical Engineering
10 Conference Proceedings Positive chemically amplified resist for ArF excimer laser lithography composed of a novel transparent photoacid generator and an alicyclic terpolymer

K. Nakano, K. Maeda, S. Iwasa, T. Ohfuji, E. Hasegawa

Society of Photo-optical Instrumentation Engineers
5 Conference Proceedings Attenuated phase-shifting mask in ArF lithography

Miyazaki, J., Uematsu, M., Nakazawa, K., Matsuo, T., Onodera, T., Ogawa, T.

SPIE - The International Society of Optical Engineering
11 Conference Proceedings High-sensitivity silylation process for 193-nm lithography

Mori,S., Kuhara,K., Ohfuji,T., Sasago,M.

SPIE-The International Society for Optical Engineering
6 Conference Proceedings Dissolution-rate analysis of ArF resist polymers based on the percolation model

Yamaguchi,A., Kishimura,S., Matsuzawa,N.N., Ohfuji,T., Tanaka,T., Tagawa,S., Sasago,M.

SPIE-The International Society for Optical Engineering
12 Conference Proceedings High-resolution surface imaging process using difunctional silylating reagent B(DMA)MS for ArF excimer laser lithography

K. Maeda, T. Ohfuji, N. Aizaki, E. Hasegawa

Society of Photo-optical Instrumentation Engineers
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12