Intrafield critical dimension variation using KrF scanner system for 0.18-ｦﾌm lithography

Intrafield critical dimension variation using KrF scanner system for 0.18-ｦﾌm lithography

Author(s):

Yim,D. ( Hyundai Electronics Industries Co.,Ltd. (Korea) )
Kim,H.-S. ( Hyundai Electronics Industries Co.,Ltd. (Korea) )
Baik,K.-H. ( Hyundai Electronics Industries Co.,Ltd. (Korea) )

Publication title:

Optical microlithography XI : 25-27 February 1998, Santa Clara, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3334

Pub. Year:

1998

Page(from):

77

Page(to):

91

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819427793 [0819427799]

Language:

English

Call no.:

P63600/3334

Type:

Conference Proceedings

Details

TDL ID:	ZA00017855
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Optical Microlithography
Conf. info. (Number):	1998 : 11th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	1998.02.25-1998.02.27

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