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Computer simulation and RBS/C studies of high-dose N+ and Al- co-implantation in 6H-SiC

Author(s):
Kharlamov,V.S. ( A. F. loffe Physical-Technical Institute (Russia) )
Kulikov,D.V. ( A. F. loffe Physical-Technical Institute (Russia) )
Trushin,Yu.V. ( A. F. loffe Physical-Technical Institute (Russia) )
Tsigankov,D.N. ( A. F. loffe Physical-Technical Institute (Russia) )
Yankov,R.A. ( Institute of Ion Beam Physics and Materials Research (FRG) )
Voelskow,M. ( Institute of Ion Beam Physics and Materials Research (FRG) )
Skorupa,W. ( Institute of Ion Beam Physics and Materials Research (FRG) )
Pezoldt,J. ( Technical Univ.of Ilmenau (FRG) )
3 more
Publication title:
International Workshop on New Approaches to High-Tech Materials, Nondestructive Testing and Computer Simulations in Materials Science and Engineering : 9-13 June 1997, St. Petersburg, Russia
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3345
Pub. Year:
1998
Page(from):
260
Page(to):
263
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819427922 [0819427926]
Language:
English
Call no.:
P63600/3345
Type:
Conference Proceedings

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