Designing dual-trench alternating phase-shift masks for 140-nm and smaller features using 248-nm KrF and 193-nm ArF lithography

Designing dual-trench alternating phase-shift masks for 140-nm and smaller features using 248-nm KrF and 193-nm ArF lithography

Author(s):

Petersen,J.S. ( SEMATECH (USA) )

Socha,R.J. ( National Semiconductor Corp. (USA) )

Naderi,A.R. ( Photronics,Inc. (USA) )

Baker,C.A. ( Photronics,Inc. (USA) )

Rizvi,S.A. ( Photronics,Inc. (USA) )

BanDenBroeke,D. ( Photronics,Inc. (USA) )

Kachwala,N. ( SEMATECH (USA) and Rockwell Semiconductor Systems (USA) )

Chen,F. ( MicroUnity Systems Engineering,Inc. (USA) )

Laiding,S. ( MicroUnity Systems Engineering,Inc. (USA) )

Wampler,K.E. ( MicroUnity Systems Engineering,Inc. (USA) )

Caldwell,R.F. ( MicroUnity Systems Engineering,Inc. (USA) )

Takeuchi,S. ( Toppan Printing Co.,Ltd.(Japan) )

Yamada,Y. ( Toppan Printing Co.,Ltd.(Japan) )

Senoh,T. ( Toppan Printing Co.,Ltd.(Japan) )

McCallum,M. ( SEMATECH(USA)andMotorola(USA) )

10 more

Publication title:

Photomask and X-Ray Mask Technology V

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3412

Pub. Year:

1998

Page(from):

503

Page(to):

520

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819428646 [0819428647]

Language:

English

Call no.:

P63600/3412

Type:

Conference Proceedings

Details

TDL ID:	ZA00017848
Series ID:	PA00000029
Conf. info. (Name):	Photomask and Next Generation Lithography Mask Technology : Photomask and X-Ray Mask Technology
Conf. info. (Number):	1998 : 5th
Conf. info. (Venue):	Kawasaki, Japan
Conf. info. (Date):	1998.04.09-1998.04.10

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