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TEM and SEM studies of defects in GaInAs and GaInAsP epitaxial-layer device-type structures

Author(s):
  • Al-Jassim, M.M. ( Department of Metallurgy and Science of Materials )
  • Hockly, M. ( Department of Metallurgy and Science of Materials )
  • Booker, G.R. ( Department of Metallurgy and Science of Materials )
Publication title:
Defects in semiconductors : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposia proceedings
Ser. no.:
2
Pub. Year:
1981
Page(from):
521
Page(to):
526
Pub. info.:
New York: North Holland
ISSN:
02729172
ISBN:
9780444005960 [044400596X]
Language:
English
Call no.:
M23500/2
Type:
Conference Proceedings

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