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Residual defects after pulsed laser annealing of ion implanted silicon

Author(s):
  • Mesli, a. ( Centre de Recherche nucleaires, Groupe de Physique et Applications des Semiconducteurs (PHASE) )
  • Muller, J.C. ( Centre de Recherche nucleaires, Groupe de Physique et Applications des Semiconducteurs (PHASE) )
  • Salles, D. ( Centre de Recherche nucleaires, Groupe de Physique et Applications des Semiconducteurs (PHASE) )
  • Siffert, P. ( Centre de Recherche nucleaires, Groupe de Physique et Applications des Semiconducteurs (PHASE) )
Publication title:
Defects in semiconductors : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposia proceedings
Ser. no.:
2
Pub. Year:
1981
Page(from):
451
Page(to):
455
Pub. info.:
New York: North Holland
ISSN:
02729172
ISBN:
9780444005960 [044400596X]
Language:
English
Call no.:
M23500/2
Type:
Conference Proceedings

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