Radiation damage and its annealing in semiconductors
- Author(s):
- Narayan, J. ( Solid State Division, Oak Ridge National Laboratory )
- Fletcher, J. ( Solid State Division, Oak Ridge National Laboratory )
- Publication title:
- Defects in semiconductors : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposia proceedings
- Ser. no.:
- 2
- Pub. Year:
- 1981
- Page(from):
- 191
- Page(to):
- 207
- Pub. info.:
- New York: North Holland
- ISSN:
- 02729172
- ISBN:
- 9780444005960 [044400596X]
- Language:
- English
- Call no.:
- M23500/2
- Type:
- Conference Proceedings
Similar Items:
North Holland |
7
Conference Proceedings
Radiation damage in silicon and its dependence on the segregation annealing process
Electrochemical Society |
2
Conference Proceedings
Melting and laser annealing in semiconductors using 0.485 mu m and 0.193 mu m pulsed lasers
North Holland |
North-Holland |
North-Holland |
Noordhoff International Publishing |
North Holland |
North-Holland |
Materials Research Society |
11
Conference Proceedings
Radiation damage measurements in room-temperature semiconductor radiation detectors
SPIE - The International Society for Optical Engineering |
North Holland |
North Holland |