Blank Cover Image

Radiation damage and its annealing in semiconductors

Author(s):
  • Narayan, J. ( Solid State Division, Oak Ridge National Laboratory )
  • Fletcher, J. ( Solid State Division, Oak Ridge National Laboratory )
Publication title:
Defects in semiconductors : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposia proceedings
Ser. no.:
2
Pub. Year:
1981
Page(from):
191
Page(to):
207
Pub. info.:
New York: North Holland
ISSN:
02729172
ISBN:
9780444005960 [044400596X]
Language:
English
Call no.:
M23500/2
Type:
Conference Proceedings

Similar Items:

Narayan, J., Fletcher, J.

North Holland

Avset, B.S.

Electrochemical Society

Narayan, J., Fletcher, J., Eby, R.E.

North Holland

Fulks, R. T., Russo, C. J., Downey, D. F., Hanley, P. R., Stacy, W. T.

North-Holland

Narayan, J.

North-Holland

Nelson S. R.

Noordhoff International Publishing

Fletcher, John, Narayan, J., Lowndes, D.H.

North Holland

10 Conference Proceedings FLAME ANNEALING OF ION IMPLANTED SILICON

Narayan, J., Young, R. T.

North-Holland

Mark, T. D., Ritter, W.

Materials Research Society

Brunett,B.A., Doyle,B.L., Franks,L.A., James,R.B., Olsen,R.W., Trombka,J.I., Vizkelthy,G., Walsh,D.S.

SPIE - The International Society for Optical Engineering

Narayan, J.

North Holland

Shukla, V.N., Narayan, J.

North Holland

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12