Undissociated dislocations and intermediate defects in As+ ion damaged silicon

Undissociated dislocations and intermediate defects in As+ ion damaged silicon

Author(s):

Foell, H. ( IBM Thomas J. Watson Research Center )
Tan, T.Y. ( IBM Thomas J. Watson Research Center )
Krakow, W. ( IBM Thomas J. Watson Research Center )

Publication title:

Defects in semiconductors : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposia proceedings

Ser. no.:

2

Pub. Year:

1981

Page(from):

173

Page(to):

177

Pub. info.:

New York: North Holland

ISSN:

02729172

ISBN:

9780444005960 [044400596X]

Language:

English

Call no.:

M23500/2

Type:

Conference Proceedings

Details

TDL ID:	ZA00017841
Series ID:	PA00000010
Conf. info. (Name):	Materials Research Society Annual Meeting ; Symposium on defects in semiconductors
Conf. info. (Number):	1980
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1980.11.16-1980.11.20

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