Blank Cover Image

Elevated-Temperature STM Study of Ge and Si Growth on Si(001) From GeH4 and Si2H6

Author(s):
Publication title:
Surface diffusion : atomistic and collective processes
Title of ser.:
NATO ASI series. Series B, Physics
Ser. no.:
360
Pub. Year:
1997
Page(from):
245
Page(to):
252
Pages:
8
Pub. info.:
New York: Plenum Press
ISBN:
9780306456138 [0306456133]
Language:
English
Call no.:
N11479/360
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings STM IMAGING OF ADSORBED TRIMETHYLGALLIUM ON GaAs(001)-(2｡ﾟ4)

Avery, A. R., Mayne, A. J., Goringe, C. M., Owen, J. H. G., Smith, C. W., Schweitzer, M. O., Jones, T. S., Briggs, G. A. …

MRS - Materials Research Society
7 Conference Proceedings Individual Molecules on GaAs(001)-(2*4) and Si(001)-(2*1): Images, Statistics, and Modelling

Goringe M. C., Avery R. A., Mayne J. A., Schweitzer O. M., Widdra W., Fisher J. A., Jones S. T., Briggs D. A. G., …

Kluwer Academic Publishers
2 Conference Proceedings Using Growth Kinetics for Nanoengineering of Si-Ge Surfaces

Goldfarb, I., Briggs, G. A. D.

MRS - Materials Research Society
8 Conference Proceedings AFM AND STM STUDIES OF LARGE SCALE UNSTABLE GROWTH FORMED DURING GaAs (001) HOMOEPITAXY

Orme, C., Johnson, M. D., Leung, K. T., Orr, B. G.

MRS - Materials Research Society
3 Conference Proceedings Drawability of Ti-6Al-4V Sheet at Elevated Temperatures

N.K. Park, J.G. Park, S.H. Seo, J.H. Kim

Trans Tech Publications
9 Conference Proceedings Sb-Terminated InAs(001)-(2x4) and (2x8) Studied Using Scanning Tunneling Microscopy and Ab Initio Density Functional Theory

Barvosa-Carter, William, Grosse, Frank, Owen, James H.G., Zinck, Jennifer J.

Materials Research Society
4 Conference Proceedings LASER PHOTOCHEMICAL VAPOR DEPOSITION OF Ge FILMS (300? T ? 873 K) FROM GeH4: ROLES OF Ge2H6 AND Ge

King, K.K., Tavitian, V., Geohegan, D.B., Cheng, E.A.P., Piette, S.A., Scheltens, F.J., Eden, J.G.

Materials Research Society
10 Conference Proceedings GROWTH STRESS IN CVD-WGex FILMS DEPOSITED BY REDUCTION OF WF6 BY GeH4

Leusink, G. J., Oosterlaken, T. G. M., Janssen, G. C. A. M., Radelaar, S.

MRS - Materials Research Society
5 Conference Proceedings Growth Kinetics of SiO2 on (001)Si Catalyzed by Cu3Si at Elevated Temperatures

Huang, H. Y., Chen, L. J.

MRS - Materials Research Society
11 Conference Proceedings High pressure crystal growth and properties of HgBa2Can-1CunO2n+2+delta, Sr1-xCuO2, CaCuO2, Y2Ba4Cu6+nO14+n

Karpinski J., Schwer H., Conder K., Molinski R., Meijer I. G., Kopnin M. E., Rossel C., Zech D., Hoffer J., Wisniewski …

Kluwer Academic Publishers
6 Conference Proceedings EPITAXIAL GROWTH OF THIN Ge FILMS ON (001) GaAs BY LASER PHOTOCHEMICAI. VAPOR DEPOSITION FROM GeH4

Tavitian, V., Kiely, C. J., Eden, J. G.

Materials Research Society
12 Conference Proceedings The characterization of the growth of sub-monolayer coverages of Si and Be on GaAs(001)-c(4｡ﾟ4)&(2｡ﾟ4)-beta by reflectance anisotropy spectroscopy and RHEED

Woolf A. D., Rose C. K., Morris J. S., Westwood I. D., Rumberg J., Reinhardt F., Richter W., Williams H. R.

Kluwer Academic Publishers
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12