Use of programmed multilayer defects in validating a defect compensation strategy for EUV Lithography

Use of programmed multilayer defects in validating a defect compensation strategy for EUV Lithography

Author(s):

Ray-Chaudhuri,A.K. ( Sandia National Labs. )

Publication title:

19th Annual Symposium on Photomask Technology : 15-17 September 1999, Monterey, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3873

Pub. Year:

1999

Vol.:

Part2

Page(from):

838

Page(to):

843

Pub. info.:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780849434686 [084943468X]

Language:

English

Call no.:

P63600/3873

Type:

Conference Proceedings

Details

TDL ID:	ZA00017632
Series ID:	PA00000029
Conf. info. (Name):	SPIE Photomask Technology : Annual Symposium on Photomask Technology
Conf. info. (Number):	1999 : 19th
Conf. info. (Venue):	Monterey, California, USA
Conf. info. (Date):	1999.09.15-1999.09.17

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