On the Origin of the Coarse and Fine Contrast Modulation in Epitaxial InGaAs Strained Layers Grown on InP Substrates

On the Origin of the Coarse and Fine Contrast Modulation in Epitaxial InGaAs Strained Layers Grown on InP Substrates

Author(s):

Publication title:

Strained layer epitaxy - materials processing and device applications : symposium held April 17-19, 1995, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

379

Pub. Year:

1995

Page(from):

159

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992825 [1558992820]

Language:

English

Call no.:

M23500/379

Type:

Conference Proceedings

Details

TDL ID:	ZA00017534
Series ID:	PA00000011
Conf. info. (Name):	Symposium on strained layer epitaxy-materials, processing, and device applications
Conf. info. (Number):	1995
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1995.04.17-1995.04.19

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