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A New Type of Graded Buffer Layer for Gas-Source Molecular Beam Epitaxial Growth of Highly Strained InxGa1-xP/GaP Multiple Quantum Wells on GaP

Author(s):
Publication title:
Strained layer epitaxy - materials processing and device applications : symposium held April 17-19, 1995, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
379
Pub. Year:
1995
Page(from):
67
Pub. info.:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992825 [1558992820]
Language:
English
Call no.:
M23500/379
Type:
Conference Proceedings

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