Blank Cover Image

Characterization of Near-Edge-Optical Transitions in Undoped and Doped GaN/Sapphire Grown by MOVPE, HVPE, and GSMBE

Author(s):
Publication title:
III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
449
Pub. Year:
1997
Page(from):
695
Pub. info.:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993532 [1558993533]
Language:
English
Call no.:
M23500/449
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings From Relaxed to Highly Tensily Strained GaN Grown on 6H-SiC and Si(111): Optical Characterization

Leroux, M., Lahreche, H., Semond, F., Lauegt, M., Feltin, E., Schnell, N., Beaumont, B., Gibart, P., Massies, J.

Trans Tech Publications
7 Conference Proceedings Blue-U.V.Homojunction GaN LEDs Fabricated by MOVPE

Beaumont,B., Calle,F., Haffouz,S., Monroy,E., Leroux,M., Calleja,E., Lorenzini,P., Mufioz,E., Gibart,P.

Trans Tech Publications
2 Conference Proceedings Effect of the Nitridation of the Sapphire (0001) substrate on the GaN Growth

Grandjean, N., Massies, J., Vennegues, P., Laugt, M., Leroux, M.

MRS - Materials Research Society
8 Conference Proceedings High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown On Bulk GaN, SiC, and Sapphire Substrates

Knap, W., Borovitskaya, E., Shur, M. S., Gaska, R., Brandt, B., Maude, D., Frayssinet, E., Lorenzini, P., Grandjean, N., …

Materials Research Society
3 Conference Proceedings Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy

Grandjean, N., Massies, J., Leroux, M., Laugt, M., Lefebvre, P., Gil, B., Allegre, J., Bigenwald, P.

MRS - Materials Research Society
9 Conference Proceedings Low Dislocations Density GaN/Sapphire for Optoelectronic Devices

BEAUMONT, B., FAURIE, J.-P., FRAYSSINET, E., AUJOL, E., GIBART, P.

Kluwer Academic Publishers
4 Conference Proceedings Si-and Mg-Doped GaN Layers Grown by Gas Source Molecular-Beam Epitaxy Using Ammonia

Grandjean, N., Massies, M., Leroux, M.

MRS - Materials Research Society
10 Conference Proceedings Exciton Dynamics of Thick GaN Epilayers Deposited by MOVPE on Al2O3

Allegre,J., Lefebvre,P., Camassel,J., Beaumont,B., Gibart,P.

Trans Tech Publications
5 Conference Proceedings Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular-Beam Epitaxy Using NH3

Grandjean, N., Leroux, M., Massies, J., Mesrine, M., Lorenzini, P.

MRS - Materials Research Society
11 Conference Proceedings Quantum Yield of Band-Edge Emission between 77 and 300 K of Undoped and Nitrogest-Doped ZnSe Epilayers Grown by MOVPE

Gurskii,A.L., Gavrilenko,A.N., Lutsenko,E.V., Yablonskii,G.P., Taudt,W., Wachtendorf,B., Sollner,J., Schmoranzer,J., …

Trans Tech Publications
6 Conference Proceedings Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum Wells

Lefebvre, P., Gil, B., Allegre, J., Mathieu, H., Grandjean, N., Leroux, M., Massies, J., Bigenwald, P.

MRS - Materials Research Society
12 Conference Proceedings Raman Mapping and Finite Element Analysis of Epitaxial Lateral Overgrown GaN on Sapphire Substrates

Benyoucef, M., Kuball, M., Beaumont, B., Bousquet, V., Gibart, P.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12