The Effect of Hydrogen on the Molecular-Beam-Epitaxy Growth of GaN on Sapphire Under Ga-Rich Conditions

The Effect of Hydrogen on the Molecular-Beam-Epitaxy Growth of GaN on Sapphire Under Ga-Rich Conditions

Author(s):

Buczkowski, S. L.

Publication title:

III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

449

Pub. Year:

1997

Page(from):

197

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993532 [1558993533]

Language:

English

Call no.:

M23500/449

Type:

Conference Proceedings

Details

TDL ID:	ZA00017523
Series ID:	PA00000011
Conf. info. (Name):	Symposium on III-V nitrides
Conf. info. (Number):	1996
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1996.12.02-1996.12.06

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