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Selective Growth GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC (0001) Multilayer Substrates Via Organometallic Vapor-Phase Epitaxy

Author(s):
Publication title:
III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
449
Pub. Year:
1997
Page(from):
107
Pub. info.:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993532 [1558993533]
Language:
English
Call no.:
M23500/449
Type:
Conference Proceedings

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