Characterization of Laterally Selected Si-Doped Layer Formed in GaAs Using a Low-Energy FIB-MBE Combined System

Characterization of Laterally Selected Si-Doped Layer Formed in GaAs Using a Low-Energy FIB-MBE Combined System

Author(s):

Nakayama, H.

Publication title:

Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

438

Pub. Year:

1997

Page(from):

187

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993426 [1558993428]

Language:

English

Call no.:

M23500/438

Type:

Conference Proceedings

Details

TDL ID:	ZA00017522
Series ID:	PA00000011
Conf. info. (Name):	Symposium on materials modification and synthesis by ion beam processing
Conf. info. (Number):	1996
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1996.12.02-1996.12.05

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