Characteristics of Dielectrics Formed or Annealed in a Nitric Oxide Ambient

Characteristics of Dielectrics Formed or Annealed in a Nitric Oxide Ambient

Author(s):

Publication title:

Rapid thermal and integrated processing IV : symposium held April 17-20, 1995, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

387

Pub. Year:

1995

Page(from):

233

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992900 [1558992901]

Language:

English

Call no.:

M23500/387

Type:

Conference Proceedings

Details

TDL ID:	ZA00017517
Series ID:	PA00000011
Conf. info. (Name):	Symposium on rapid thermal and integrated processing
Conf. info. (Number):	4th
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1995.04.17-1995.04.20

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