Study of wetting properties of Ti/TiN liners deposited by ion metal plasma PVD for low-temperature sub-0.25-ｦﾌm Al fill technology

Study of wetting properties of Ti/TiN liners deposited by ion metal plasma PVD for low-temperature sub-0.25-ｦﾌm Al fill technology

Author(s):

Hui,S. ( Applied Materials,Inc. )

Ngan,K. ( Applied Materials,Inc. )

Narasimhan,M.K. ( Applied Materials,Inc. )

Hogan,B. ( Applied Materials,Inc. )

Yao,G. ( Applied Materials,Inc. )

Ramaswami,S. ( Applied Materials,Inc. )

1 more

Publication title:

Multilevel Interconnect Technology

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3214

Pub. Year:

1997

Page(from):

79

Page(to):

83

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819425461 [081942546X]

Language:

English

Call no.:

P63600/3214

Type:

Conference Proceedings

Details

TDL ID:	ZA00017398
Series ID:	PA00000029
Conf. info. (Name):	Microelectronic Manufacturing : Multifevel Interconnect Technology
Conf. info. (Number):	1997
Conf. info. (Venue):	Austin, TX, USA
Conf. info. (Date):	1997.10.01-1997.10.02

Similar Items:

1 Conference Proceedings Statistical design of experimental analysis of TiN films deposited by ion metal plasma PVD for sub-0.25-ｦﾌm IC process applications Hui,S., Ngan,K., Narasimhan,M.K., Forster,J. SPIE-The International Society for Optical Engineering	7 Conference Proceedings 0.25-ｦﾌm multilevel interconnect with DUV processing Krisa,W.L., Shaw,S.Y., Brennan,K., Dixit,G.A., Jain,M.K. SPIE-The International Society for Optical Engineering
2 Conference Proceedings Improved Al-Via Fill Process Technology for Sub-0.25 ｦﾌm Interconnect Sengupta, S. S., Narasimhan, M., Lee, S., Abburi, M., Yao, G. MRS - Materials Research Society	8 Conference Proceedings SIMOX MATERIAL DEVELOPMENT FOR SUB-0.25ｦﾌm CMOS TECHNOLOGY Sadana, D. K., Hovel, H. J., Freeouf, J. L., Chu, S. F. MRS - Materials Research Society
3 Conference Proceedings Integrated IMP Ti and MOCVD TiN for 300-mm W barrier and Liner for sub-0.18-ｦﾌm IC processing Tolia,A., Menezes,M., Li,J., Jackson,M., Pavate,V., Khurana,N., Mosely,R., Narasimhan,M.K., Chang,M., Chen,F.E. SPIE - The International Society for Optical Engineering	9 Conference Proceedings Sub-0.25-ｦﾌm defect analysis on 200-mm semiconductor wafers Childs,K.D., Paul,D.F., Clough,S.P. SPIE-The International Society for Optical Engineering
4 Conference Proceedings Optimization of PVD Ti/CVD TiN Liner for 0.35 ｦﾌm Tungsten Plug Technology Wang, C.-K., Liu, L. M., Liao, D. M., Smith, D. C., Danek, M. MRS - Materials Research Society	10 Conference Proceedings NA/o optimization strategies for an advanced DUV stepper applied to 0.25-ｦﾌm and sub-0.25-ｦﾌm critical levels Beeck,M.Op de, Ronse,K., Ghandehari,K., Jaenen,P., Botermans,H., Finders,J., Lilygren,J.A., Baker,D.C., Vandenberghe,G., … SPIE-The International Society for Optical Engineering
5 Conference Proceedings Optimizing Sputtered TiN Arc Film Properties for Lithography of Sub-0.25 ｦﾌm Interconnect Sengupta, S. S., Baker, D., Sethi, S., Bothra, S. MRS - Materials Research Society	11 Conference Proceedings Silicide Contacts for Sub-0.25 ｦﾌm Devices Chen, L. J., Cheng, S. L., Chang, S. M., Peng, Y. C., Huang, H. Y., Cheng, L. W. MRS - Materials Research Society
6 Conference Proceedings Characterization of gate electrode etch process for 0.25 ｦﾌm extended to 0.18 ｦﾌm Gerung,H., Chhagan,V.K., Yelehanka,P.R., Zhou,M.S., Hui,J.K.L. SPIE - The International Society for Optical Engineering	12 Conference Proceedings Practical implementation of alternating PSM to memory device of sub-0.25-ｦﾌm technology Ahn,C.-N., Kim,H.-E., Kim,H.-B., Baik,K.-H. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12