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Forward current-voltage characteristics of HgCdTe p-on-n photodiodes

Author(s):
  • Li,X. ( Shanghai Institute of Technical Physics (China) )
  • Zhao,J. ( Shanghai Institute of Technical Physics (China) )
  • Lu,H ( Shanghai Institute of Technical Physics (China) )
  • Fang,J. ( Shanghai Institute of Technical Physics (China) )
  • Xia,Y. ( Shanghai Institute of Technical Physics (China) )
Publication title:
Infrared Detectors and Focal Plane Arrays V : 14-17 April 1998, Orlando, Florida
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3379
Pub. Year:
1998
Page(from):
601
Page(to):
607
Pub. info.:
Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819428288 [0819428280]
Language:
English
Call no.:
P63600/3379
Type:
Conference Proceedings

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