Blank Cover Image

Real Time 3-D Patterned Crystal Growth of GaAs Using a Low Energy Focused Ion Beam and Molecular Beam Epitaxy

Author(s):
Beere E. H.
Thompson H. J.
Sazio J. P.
Jones C. A. G.
Ritchie A. D.
Smith W. G.
Whitehouse R. C.
2 more
Publication title:
Frontiers in nanoscale science of micron/submicron devices
Title of ser.:
NATO ASI series. Series E, Applied sciences
Ser. no.:
328
Pub. Year:
1996
Page(from):
41
Page(to):
45
Pages:
5
Pub. info.:
Dordrecht: Kluwer Academic Publishers
ISSN:
0168132X
ISBN:
9780792343011 [0792343018]
Language:
English
Call no.:
N11482/328
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings 3-D Patterned III-? Semicondutor Devices Using High Energy In-Situ Focused Ion Beam and Molecular Beam Epitaxy

Rose D. P., Linfield H. E., JonesC. A. G., Ritchie A. D., .

Kluwer Academic Publishers
7 Conference Proceedings Effects of Growth Sequence on Optical and Structural Properties of InAs/GaAs Quantum Dots Grown by Atomic Layer Molecular Beam Epitaxy

Song, J.D., Park, Y.M, Shin, J.C., Lim, J.G., Park, Y.J., Choi, W.J., Han, I.K., Cho, W.J., Lee, J.I., Kim, H.S., Park, …

Materials Research Society
2 Conference Proceedings DEVELOPMENT OF ANISOTROPIC GaAs (001) SURFACE MORPHOLOGY DURING MOLECULAR BEAM EPITAXIAL GROWTH

Pidduck, Allan J., Smith, G. W., Keir, A. M., Whitehouse, C. R.

MRS - Materials Research Society
8 Conference Proceedings CHARACTERIZATION OF InGaAs/InP EPITAXIAL LAYERS GROWN OVER V-GROOVE PATTERNED InP SUBSTRATES USING GAS SOURCE MOLECULAR BEAM EPITAXY

Bulitka, N. J., Gupta, A., Robinson, B. J., Thompson, D. A., Weatherly, G. C., Simmons, J. G.

MRS - Materials Research Society
3 Conference Proceedings THE ENERGY DEPENDENCE OF ION DAMAGE IN AlxGa1-xAs/GaAs HETEROSTRUCTURES AND THE EFFECTS OF IMPLANTED IMPURITY

Cullis, A. G., Jacobson, D. C., Polman, A., Smith, P. W., Poate, J. M., Whitehouse, C. R

Materials Research Society
9 Conference Proceedings Novel applications of low-energy ions in molecular beam epitaxy of III-V semiconductors

S.A. Barnett, J. Mirecki-Millunchick, J.G. Labanda, R. Kaspi, L. Hultman

Society of Photo-optical Instrumentation Engineers
4 Conference Proceedings Characterization of Samples Regrown by Molecular Beam Epitaxy following In Situ Bombardment with Variable-Energy Focused Ion Beams

Bone, D.J., Lee, H., Williams, K., Harris, J.S., Jr., Pease, R. F. W.

Electrochemical Society
10 Conference Proceedings GaAs Micro Crystal Growth on an As-Terminated Si (001) Surface by Low Energy Focused Ion Beam

Chikyow, T., Koguchi, N.

MRS - Materials Research Society
5 Conference Proceedings Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion-Beam and Molecular-Beam-Epitaxy Method

Shibata, H., Kimura, S., Fons, P., Yamada, A., Makita, Y., Obara, A., Kobayashi, N., Takahashi, H., Katsumata, H., …

MRS - Materials Research Society
11 Conference Proceedings GROWTH OF HIGH-RESISTIVITY WURTZITE AND ZINCBLENDE STRUCTURE SINGLE CRYSTAL GaN BY REACTIVE-ION MOLECULAR BEAM EPITAXY

Powell, R.C., Tomasch, G.A., Kim, Y.-W., Thornton, J.A., Greene, J.E.

Materials Research Society
6 Conference Proceedings Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion-Beam and Molecular-Beam-Epitaxy Method

Shibata, H., Kimura, S., Fons, P., Yamada, A., Makita, Y., Obara, A., Kobayashi, N., Takahashi, H., Katsumata, H., …

MRS - Materials Research Society
12 Conference Proceedings Growth of Fe/ZnSe Multilayers on GaAs (001) and (111) by Molecular Beam Epitaxy

Abad, H., Jonker, B. T., Cotell, C. M., Qadri, S. B., Krebs, J. J.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12