76 Effect of impurity concentration on 1.54-ｦﾌm emission from GaN:Er

76 Effect of impurity concentration on 1.54-ｦﾌm emission from GaN:Er

Author(s):

Abernathy,C.R. ( Univ.of Florida )

Publication title:

Rare-earth-doped materials and devices IV : 26-27 January 2000, San Jose, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3942

Pub. Year:

2000

Page(from):

76

Page(to):

86

Pub. info.:

Bellingham, Washington: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819435590 [0819435597]

Language:

English

Call no.:

P63600/3942

Type:

Conference Proceedings

Details

TDL ID:	ZA00017171
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Rare-Earth-Doped Materials and Devices
Conf. info. (Number):	2000 : 4th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2000.01.26-2000.01.27

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