Growth of Cobalt Silicide on Si(100)by Molecular Beam Epitaxy
- Author(s):
- Publication title:
- Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999)
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 3975
- Pub. Year:
- 2000
- Vol.:
- Part1
- Page(from):
- 364
- Page(to):
- 366
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819436016 [0819436011]
- Language:
- English
- Call no.:
- P63600/3975
- Type:
- Conference Proceedings
Similar Items:
SPIE - The International Society for Optical Engineering |
7
Conference Proceedings
Pronounced Auger suppression in long wavelength HgCdTe devices grown by molecular beam epitaxy
SPIE - The International Society of Optical Engineering |
2
Conference Proceedings
Schottky diode on Si/Si1-x-yGexCy/Si quantum well heterostructures for long wavelength IR detector
SPIE-The International Society for Optical Engineering |
8
Conference Proceedings
Epitaxial Growth of Zinc-Blende AlN by Plasma Source Molecular Beam Epitaxy
MRS - Materials Research Society |
3
Conference Proceedings
Molecular beam epitaxy grown long wavelength infrared HgCdTe on compliant Si substrates [6206-40]
SPIE - The International Society of Optical Engineering |
Narosa Publishing House |
4
Conference Proceedings
Comparison of cathodoluminescence and photoluminescence of CdSeTe films grown on Si by molecular beam epitaxy
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
5
Conference Proceedings
Gold diffusion in mercury cadmium telluride grown by molecular beam epitaxy
SPIE - The International Society of Optical Engineering |
11
Conference Proceedings
Computation of Effective Mobility in Buried Channel Heterostructure MOSFET
SPIE-The International Society for Optical Engineering |
6
Conference Proceedings
EPITAXIAL GROWTH AND CHARACTERIZATION OF THE ORDERED VACANCY COMPOUND CuIn3Se5 ON GaAs(100) FABRICATED BY MOLECULAR BEAM EPITAXY
MRS - Materials Research Society |
Society of Photo-optical Instrumentation Engineers |