Lower Leakage and Higher Breakdown Voltage for MNOS(Metal-Sin-Sio2-Si)Structure

Author(s):

• Reddy,A.Sudhakar
• Rao,P.R.S.
• Bhat,K.N.
• Gupta,Nandita Das

Publication title:

Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999)

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3975

Pub. Year:

2000

Vol.:

Part1

Page(from):

357

Page(to):

359

Pub. info.:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819436016 [0819436011]

Language:

English

Call no.:

P63600/3975

Type:

Conference Proceedings