Optimisation of Growth Conditions for Gallium Nitride Synthesis
- Author(s):
- Publication title:
- Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999)
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 3975
- Pub. Year:
- 2000
- Vol.:
- Part1
- Page(from):
- 280
- Page(to):
- 282
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819436016 [0819436011]
- Language:
- English
- Call no.:
- P63600/3975
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
High Energy Implantation Studies on pBN Grown Semi-Insulating Gallium Arsenide Single Crystals
SPIE-The International Society for Optical Engineering, Narosa |
Society of Automotive Engineering, Inc. |
MRS - Materials Research Society |
8
Conference Proceedings
Occurrence of 'Accidental' InN Quantum Dots in Indium Gallium Nitride/Gallium Nitride Heterostructures
Materials Research Society |
3
Conference Proceedings
Nucleation and Growth of Gallium Nitride Films on Si and Sapphire Substrates Using Buffer Layers
MRS - Materials Research Society |
Narosa Publishing House |
Narosa Publishing House |
Narosa Publishing House |
5
Conference Proceedings
Gallium Nitride Growth Using Diethylgallium Chloride as an Alternative Gallium Source
MRS - Materials Research Society |
11
Conference Proceedings
Initial Stages of MOCVD Growth of Gallium Nitride Using a Multistep Growth Approach
MRS - Materials Research Society |
6
Conference Proceedings
Pendeo-Epitaxy-A New Approach for Lateral Growth of Gallium Nitride Structures
MRS - Materials Research Society |
MRS - Materials Research Society |