Growth and Characterization of InGaAs/InP Quantum Wells
- Author(s):
- Publication title:
- Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999)
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 3975
- Pub. Year:
- 2000
- Vol.:
- Part1
- Page(from):
- 142
- Page(to):
- 148
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819436016 [0819436011]
- Language:
- English
- Call no.:
- P63600/3975
- Type:
- Conference Proceedings
Similar Items:
SPIE - The International Society for Optical Engineering |
7
Conference Proceedings
Growth and Characterization of GaAs Epitaxial Layers on Ge by Atmospheric Pressure MOVPE
Narosa Publishing House |
2
Conference Proceedings
Fabrication and Characterization of GaAs MIS Devices with n- Rich PECVD Sixny Dielectric
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
3
Conference Proceedings
Growth and Characterization of Interfaces in p-Type InGaAs/InP Quantum-Well Infrared Photodetectors with Ultrathin Quantum Wells
MRS - Materials Research Society |
9
Conference Proceedings
Etch Pit Observation of Ga1-xInxAs Epitaxial Layers Grown on GaAs and InP Substrates
Narosa Publishing House |
SPIE - The International Society for Optical Engineering |
Narosa Publishing House |
Narosa Publishing House |
11
Conference Proceedings
A Novel Technique for the Characterization of Silicon Oxynitride Thin Films
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering, Narosa |
12
Conference Proceedings
Aspects of the Growth of InP / InGaAs Multi-Quantum Well Structures by Gas Source Molecular Beam Epitaxy
Plenum Press |