Mask-Induced Strain in GaAs Layers Grown by Liquid Phase Epitaxial Lateral Overgrowth
- Author(s):
- Publication title:
- Epitaxial growth - principles and applications : symposium held April 5-8, 1999, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 570
- Pub. Year:
- 1999
- Page(from):
- 273
- Pub. info.:
- Warrendale, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994775 [1558994777]
- Language:
- English
- Call no.:
- M23500/570
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Epitaxial Lateral Overgrowth of Gallium Arsenide Studied by Synchrotron Topography
MRS - Materials Research Society |
7
Conference Proceedings
Picosecond photoinduced reflectivity studies of GaN prepared by lateral epitaxial overgrowth
MRS-Materials Research Society |
SPIE-The International Society for Optical Engineering |
8
Conference Proceedings
Synchrotron X-ray topography studies of epitaxial lateral overgrowth of GaN on sapphire
MRS-Materials Research Society |
SPIE-The International Society for Optical Engineering |
MRS-Materials Research Society |
4
Conference Proceedings
Dot Pattem Epitaxial Lateral Overgrowth of GaN by Hydride Vapor Phase Epitaxy.
Electrochemical Society |
MRS - Materials Research Society |
5
Conference Proceedings
Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth
SPIE - The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
6
Conference Proceedings
GaN and AIN layers grown by nano epitaxial lateral overgrowth technique on porous substrates
MRS-Materials Research Society |
SPIE-The International Society for Optical Engineering |