Morphological Transition of Ge Islands on Si(001) Grown by LPCVD

Morphological Transition of Ge Islands on Si(001) Grown by LPCVD

Author(s):

Publication title:

Epitaxial growth - principles and applications : symposium held April 5-8, 1999, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

570

Pub. Year:

1999

Page(from):

205

Pub. info.:

Warrendale, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994775 [1558994777]

Language:

English

Call no.:

M23500/570

Type:

Conference Proceedings

Details

TDL ID:	ZA00017067
Series ID:	PA00000011
Conf. info. (Name):	Symposium on epitaxial growth-principles and applications
Conf. info. (Number):	1999
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1999.04.05-1999.04.08

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