Behavior of Electron Traps Induced by Phosphidization and Nitridation of GaAs Surfaces

Author(s):

• Nozu, S.
• Matsuda, K.
• Sugino, T.

Publication title:

Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

510

Pub. Year:

1998

Page(from):

549

Pub. info.:

Warrendale, Pa: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994164 [1558994165]

Language:

English

Call no.:

M23500/510

Type:

Conference Proceedings