The Effect of Doping on Nitrogen Activation Energy Level in 4H-SiC
- Author(s):
- Publication title:
- Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 510
- Pub. Year:
- 1998
- Page(from):
- 187
- Pub. info.:
- Warrendale, Pa: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994164 [1558994165]
- Language:
- English
- Call no.:
- M23500/510
- Type:
- Conference Proceedings
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