Carbon Doping Into GaAs Using Low-Energy Hydrocarbon Ions

Carbon Doping Into GaAs Using Low-Energy Hydrocarbon Ions

Author(s):

Sanpei, H.

Publication title:

Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

510

Pub. Year:

1998

Page(from):

61

Pub. info.:

Warrendale, Pa: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994164 [1558994165]

Language:

English

Call no.:

M23500/510

Type:

Conference Proceedings

Details

TDL ID:	ZA00017062
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defect and impurity engineered semiconductors
Conf. info. (Number):	2nd
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1998.04.13-1998.04.17

Similar Items:

1 Conference Proceedings Highly Efficient Nitrogen Doping Into GaAs Using Low-Energy Nitrogen Molecular Ions Shima, T., Makita, Y., Kimura, S., Sanpei, H., Fukuzawa, Y. MRS - Materials Research Society	7 Conference Proceedings Annealing Effect of Cd+ Ion-Implanted Liquid Encapsulated Czochralski-GaAs Kawasumi, Y., Makita, Y., Kimura, S., Iida, T., Kotani, M., Obara, A., Shibata, H., Kobayashi, N., Tsukamoto, T., … MRS - Materials Research Society
2 Conference Proceedings Effects of Carbon-Ion Irradiation-Energies on the Molecular Beam Epitaxy of GaAs and InGaAs Makita, Y., Iida, T., Shima, T., Kimura, S., Obara, A., Harada, K., Tu, C. W., Uekusa, S., Matsumori, T., Kudo, K., … MRS - Materials Research Society	8 Conference Proceedings The Resistivity Recovery of High Purity and Carbon-Doped Iron after Low and Room Temperature Deformation Takaki,S., Kimura,T., Kimura,H. Trans Tech Publications
3 Conference Proceedings Low-temperature photoluminescence characterization of impurity-doped GaAs and silicides prepared by molecular beam epitaxy,high-energy ion implantation,and … Makita,Y. SPIE-The International Society for Optical Engineering	9 Conference Proceedings Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion-Beam and Molecular-Beam-Epitaxy Method Shibata, H., Kimura, S., Fons, P., Yamada, A., Makita, Y., Obara, A., Kobayashi, N., Takahashi, H., Katsumata, H., … MRS - Materials Research Society
4 Conference Proceedings High-Energy Ion-Implantation of a Moderately Deep Acceptor Hg Into Liquid Encapsulated Czocharalski Grown GaAs: Formation of New Shallow Emission Bands Harada, K., Makita, Y., Shibata, H., Lo, B., Beye, A. C., Halsall, M. P., Kimura, S., Kobayashi, N., Iida, T., Shima, … MRS - Materials Research Society	10 Conference Proceedings Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion-Beam and Molecular-Beam-Epitaxy Method Shibata, H., Kimura, S., Fons, P., Yamada, A., Makita, Y., Obara, A., Kobayashi, N., Takahashi, H., Katsumata, H., … MRS - Materials Research Society
5 Conference Proceedings Optical and Electrical Properties of Heavily Carbon-Doped GaAs Fabricated by High-Energy Ion-Implantation Shima, Takayuki, Makita, Yunosuke, Kimura, Shinji, Harada, Kentaro, Iida, Tsutomu, Kotani, Masanori, Osawa, Akihumi, … MRS - Materials Research Society	11 Conference Proceedings Fabrication of Epitaxial Silicides Thin Films by Combining Low-Energy Ion Beam Deposition and Silicon Melecular Beam Epitaxy Shibata, H., Makita, Y., Katsumata, H., Kimura, S., Kobayashi, N., Hasegawa, M., Hishita, S., Beye, A. C., Takahashi, … MRS - Materials Research Society
6 Conference Proceedings Photoluminescence Spectra from Acceptor-Doped GaAs and InP having Extremely Low Background Concentration of Donor Impurities: Formation of Novel Emissions Yoshinaga, H., Makita, Y., Iida, T., Yamada, A., Winter, S., Kimura, S., Niki, S., Obara, A., Oda, O., Kainosho, K., … Electrochemical Society	12 Conference Proceedings DAMAGE-FREE ION BEAM DOPING OF CARBON DURING MOLECULAR BEAM EPITAXY OF GaAs Makita, Yunosuke, Iida, Tsutomu, Kimura, Shinji, Winter, Stefan, Yamada, Akimasa, Shibata, Hajime, Obara, Akira, Niki, … MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12