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Modelling and 2-D Numerical Simulation of Transient Phenomena in Floating Body SOI MOSFETs

Author(s):
Publication title:
Semiconductor process and device performance modeling : symposium held December 2-3, 1997, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
490
Pub. Year:
1998
Page(from):
239
Pub. info.:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993952 [1558993959]
Language:
English
Call no.:
M23500/490
Type:
Conference Proceedings

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