Two-Dimensional Profiling of Dopants in Semiconductor Devices Using Preferential Etching/TEM Method

Two-Dimensional Profiling of Dopants in Semiconductor Devices Using Preferential Etching/TEM Method

Author(s):

Publication title:

Specimen preparation for transmission electron microscopy of materials IV : symposium held April 2, 1997, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

480

Pub. Year:

1997

Page(from):

83

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993846 [1558993843]

Language:

English

Call no.:

M23500/480

Type:

Conference Proceedings

Details

TDL ID:	ZA00017059
Series ID:	PA00000011
Conf. info. (Name):	Symposium on specimen preparation for transmission electron microscopy of materials
Conf. info. (Number):	4th
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1997.04.02

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