Ultralow Thermal Budget Rapid Thermal Processing for Thin Gate Oxide Dielectrics: Reduction of Suboxide Transition Regions in Low-Temperature Processed Si/SiO2 Structures by a 900｡？30-Second Rapid Thermal Anneal

Ultralow Thermal Budget Rapid Thermal Processing for Thin Gate Oxide Dielectrics: Reduction of Suboxide Transition Regions in Low-Temperature Processed Si/SiO2 Structures by a 900｡？30-Second Rapid Thermal Anneal

Author(s):

Publication title:

Rapid thermal and integrated processing VI : symposium held April 1-4, 1997, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

470

Pub. Year:

1997

Page(from):

355

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993747 [1558993746]

Language:

English

Call no.:

M23500/470

Type:

Conference Proceedings

Details

TDL ID:	ZA00017058
Series ID:	PA00000011
Conf. info. (Name):	Symposium on rapid thermal and integrated processing
Conf. info. (Number):	6th
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1997.04.01-1997.04.04

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