High Quality GdSi1.7 Layers Formed by High Dose Channeled Implantation

High Quality GdSi1.7 Layers Formed by High Dose Channeled Implantation

Author(s):

Publication title:

Advanced metallization for future ULSI : symposium held April 8-11, 1996, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

427

Pub. Year:

1996

Page(from):

535

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993303 [1558993304]

Language:

English

Call no.:

M23500/427

Type:

Conference Proceedings

Details

TDL ID:	ZA00017054
Series ID:	PA00000011
Conf. info. (Name):	Symposium on advanced metallization for future ulsi
Conf. info. (Number):	1996
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1996.04.08-1996.04.11

Similar Items:

1 Conference Proceedings Formation and Thermal Stability of Nd0.32Y0.68Si1.7 Layers Formed by Channeled Ion Beam Synthesis Wu, M. F., Vantomme, A., Hogg, S., Pattyn, H., Langouche, G., Jin, S., Bender, H. MRS - Materials Research Society	7 Conference Proceedings Comparative study of structural properties and photoluminescence in InGaN layers with a high in content Vantomme, A., Wu, M. F., Hogg, S., Langouche, G., Jacobs, K., Moerman, I., White, M. E., O'Donnell, K. P., Nistor, L., … MRS-Materials Research Society
2 Conference Proceedings Structural Characterization of Ion Beam Synthesized Epitaxial ErSi2-x Layers Bender, H., Wu, M. F., Vantomme, A., Pattyn, H., Langouche, G. MRS - Materials Research Society	8 Conference Proceedings Growth of Co on Ag(100): A comparison of ultra low energy ion beam deposition and thermal deposition Degroote, B., Dekoster, J., Degroote, S., Pattyn, H., Vantomme, A., Langouche, G., Hou, M. MRS-Materials Research Society
3 Conference Proceedings ION BEAM SYNTHESIS OF BURIED CoxNi1-xSi2 LAYERS IN SILICON Wu, M. F., Wachter, J. De, Bavel, A.-M. Van, Pattyn, H., Langouche, G., Vanhellemont, J., Bender, H., Temst, K., Wuyts, … MRS - Materials Research Society	9 Conference Proceedings Temperature Dependence and Annealing Behaviour of Hf Implanted (100)Si: HfSi2 Synthesis Silva, M. R. da, Melo, A. A., Soares, J. C., Silva, M. F. da, Moons, R., Langouche, G., Vantomme, A., Conde, O., Lu, … MRS - Materials Research Society
4 Conference Proceedings ION BEAM SYNTHESIS OF BURIED CoxNi1-xSi2 LAYERS IN SILICON Wu, M. F., Wachter, J. De, Bavel, A.-M. Van, Pattyn, H., Langouche, G., Vanhellemont, J., Bender, H., Temst, K., Wuyts, … MRS - Materials Research Society	10 Conference Proceedings Microstructural Studies of Co Silicide Layers Formed on SiGe and SiGeC Jin, S., Bender, H., Donaton, R. A., Maex, K., Vantomme, A., Langouche, G., Amour, A. St., Sturm, J. C. MRS - Materials Research Society
5 Conference Proceedings Unusual Diffusion and Precipitation Behavior of Ni and Cu in Si upon Elevated-Temperature Ion Implantation Langouche,G., Wu,M.F., Wachter,J.De, Pattyn,H., Bavel,A.-M.Van Trans Tech Publications	11 Conference Proceedings The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si Bavel,A.-M.Van, Degroote,S., Vantomme,A., Stesmans,A., Langouche,G. Trans Tech Publications
6 Conference Proceedings FORMATION OF WELL-SEPARATED BURIED AND SURFACE NICKEL-SILICIDE LAYERS IN A SINGLE ION IMPLANTATION STEP Wu, M.F., De Wachter, J., Hendrickx, P., Pattyn, H., Van Bavel, A.M., Langouche, G., Vanhellemont, J., Bender, H., … Materials Research Society	12 Conference Proceedings SITE OCCUPATION OF IMPLANTED Te IN GaAs AS A FUNCTION OF IMPLANTATION DOSE Langouche, G., Schroyen, D., Bemelmans, H., Van Rossum, M., De Raedt, W., de Potter, M. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12