Origin of the 1.3 eV Transition in InP/InAlAS/InP Heterostructure

Origin of the 1.3 eV Transition in InP/InAlAS/InP Heterostructure

Author(s):

Publication title:

Diagnostic techniques for semiconductor materials processing II : symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

406

Pub. Year:

1996

Page(from):

277

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993099 [1558993096]

Language:

English

Call no.:

M23500/406

Type:

Conference Proceedings

Details

TDL ID:	ZA00017052
Series ID:	PA00000011
Conf. info. (Name):	Symposium on diagnostic techniques for semiconductor materials processing
Conf. info. (Number):	2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1995.11.27-1995.11.30

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