In-Situ Monitoring of MOCVD Grown InxAl1-xAs/GaAs Epitaxial Layers by Two Laser Beams Reflectometry

In-Situ Monitoring of MOCVD Grown InxAl1-xAs/GaAs Epitaxial Layers by Two Laser Beams Reflectometry

Author(s):

Publication title:

Diagnostic techniques for semiconductor materials processing II : symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

406

Pub. Year:

1996

Page(from):

115

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993099 [1558993096]

Language:

English

Call no.:

M23500/406

Type:

Conference Proceedings

Details

TDL ID:	ZA00017052
Series ID:	PA00000011
Conf. info. (Name):	Symposium on diagnostic techniques for semiconductor materials processing
Conf. info. (Number):	2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1995.11.27-1995.11.30

Similar Items:

1 Conference Proceedings 1.5 ｦﾌm In0.53Al0.14Ga0.33As/In0.52Al0.48As Distributed Bragg Reflector and Single Cavity Active Layer Grown with In Situ Double-Beam Laser Reflectometry Baek, Jong-Hyeob, Lee, Bun, Lee, Jin Hong, Han, Won Seok, Lee, El-Hang MRS - Materials Research Society	7 Conference Proceedings Thick AlxGa1-xAs in GaAs/AlxGa1-xAs Quantum Wells:a Leaky Barrier, Kim,D.S., Ko,H.S., Kim,Y.M., Rhee,S.J., Hong,S.C., Yee,D.S., Woo,J.C., Choi,H.J., Ihm,J. SPIE-The International Society for Optical Engineering
2 Conference Proceedings REDUCTION OF DEFECTS IN HIGHLY LATTICE MISMATCHED InGaAs GROWN ON GaAs BY MOCVD Lee, Bun, Yoon, Meeyoung, Baek, Jong-Hyeob, Lee, El-Hang, Lee, Jeong Yong MRS - Materials Research Society	8 Conference Proceedings Facet Evolution and Selective Growth of GaAs/AlGaAs Lateral Structure Grown by Growth-Interrupted Chemical Beam Epitaxy Using Unprecracked Monoethylarsine Ro, Jeong-Rae, Kim, Sung-Bock, Park, Seong-Ju, Lee, Jihwa, Lee, El-Hang MRS - Materials Research Society
3 Conference Proceedings DEFECT-FREE GaAs CAP LAYER ON ALUMINUM OXIDE GENERATED BY THERMAL OXIDATION OF AlAs Lee, Bun, Yoon, Meeyoung, Baek, Jong-Hyeob,, Lee, El-Hang MRS - Materials Research Society	9 Conference Proceedings COMPARATIVE STUDIES OF THE STRUCTURAL, ELECTRICAL AND OPTOELECTRONIC PROPERTIEC OF EPITAXIAL GaAs LAYERS GROWN ON EITHER Si, Ge OR Ge COATED S1 SUBSTRATES BY … Awal, Abdul M., Lee, E. H., Chan, E. Y., Lum R. M., Klingert, J. K., Sheng, T. T., Hopkins, L. C., Opila, R. L. Materials Research Society
4 Conference Proceedings SMOOTHING EFFECTS OF MOCVD GROWN GaAs/AlxGa1-xAs SUPERLATICES Xu, Xian-gang, Huang, Bai-Biao, Liu, Shi-wen, Ren, Hong-wen, Jiang, Min-hua Materials Research Society	10 Conference Proceedings Quantum Confinement Effect of Silicon Nanocrystals In Situ Grown in Silicon Nitride Films Kim, Tae-Youb, Park, Nae-Man, Kim, Kyung-Hyun, Ok, Young-Woo, Seong, Tae-Yeon, Choi, Cheol-Jong, Sung, Gun Yong Materials Research Society
5 Conference Proceedings Ohmic Contact to GaN Grown by MOCVD Kim, Dae-Woo, Baik, Hong Koo, Kim, Cha Yeon, Kim, Sung Woo, Hong, Chang Hee MRS - Materials Research Society	11 Conference Proceedings THE EFFECT OF RAPID THERMAL TREATMENT ON THE STRUCTURAL OPTOELECTRONIC PROPERTIES OF EPITAXIAL GaAs ON Si GROWN WITH OR WITHOUT Ge INTERMEDIATE LAYERS Lee, El-Hang, Awal, Abdul M., Chan, E. Y., Opila, R. L., Jacobson, D. C., Pearton,. S. J. Materials Research Society
6 Conference Proceedings Growth and characterization of GaxIn1-xAs1-ySby epitaxial layers grown by LP-MOCVD [6029-38] Wang J., Wang Y., Wang T., Yang S., Li X., Yin J., Sai X., Gao H. SPIE - The International Society of Optical Engineering	12 Conference Proceedings In Situ Growth and Growth Kinetics of Epitaxial (100) CoSi2 Layer on (100) Si by Reactive Chemical Vapor Deposition Rhee, Hwa Sung, Lee, Heui Seung, Park, Jong Ho, Ahn, Byung Tae Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12