Photoconductivity as a Function of Temperature in MOCVD Grown Gallium Nitride Films
- Author(s):
- Publication title:
- Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 378
- Pub. Year:
- 1995
- Page(from):
- 515
- Pub. info.:
- Pittsburgh, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992818 [1558992812]
- Language:
- English
- Call no.:
- M23500/378
- Type:
- Conference Proceedings
Similar Items:
MRS - Materials Research Society |
7
Conference Proceedings
The effect of indium surfactant on the optoelectronic and structural properties of MBE grown gallium nitride
MRS-Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
Trans Tech Publications |
4
Conference Proceedings
EFFECTS OF LIGHT-SOAKING IN a-Si:H STUDIED BY PHOTOCONDUCTIVITY RESPONSE TIME
Materials Research Society |
Electrochemical Society |
Materials Research Society |
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
12
Conference Proceedings
Improved Aluminum Nitride Thin Films Grown by MOCVD From Tritertiarybutylaluminum and Ammonia
MRS - Materials Research Society |