Deep Level Defects in GaN Characterized by Capacitance Transient Spectroscopies

Deep Level Defects in GaN Characterized by Capacitance Transient Spectroscopies

Author(s):

Publication title:

Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

378

Pub. Year:

1995

Page(from):

491

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992818 [1558992812]

Language:

English

Call no.:

M23500/378

Type:

Conference Proceedings

Details

TDL ID:	ZA00017050
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defect and impurity engineered semiconductors and devices
Conf. info. (Number):	1995
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1995.04.17-1995.04.21

Similar Items:

1 Conference Proceedings Shallow and Deep Level Defects in GaN Gotz, W., Johnson, N. M., Bour, D. P., Chen, C., Liu, H., Kuo, C., Imler, W. MRS - Materials Research Society	7 Conference Proceedings Localized Donors in GaN: Spectroscopy Using Large Pressures Wetzel, C., Amano, H., Akasaki, I., Suski, T., Ager, J. W., Weber, E. R., Haller, E. E., Meyer, B. K. MRS - Materials Research Society
2 Conference Proceedings Donor-Like Deep Level Defects in GaN Characterized by Double-Correlation Deep Level Transient Spectroscopy Ahoujja, Mo, Hogsed, M., Yeo, Y. K., Hengehold, R. L. Materials Research Society	8 Conference Proceedings *DEEP LEVEL TRANSIENT SPECTROCOPY: DEFECT CHARACTERIZATION IN SEMICONDUCTOR DEVICES Johnson, N.M. Materials Research Society
3 Conference Proceedings Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition Gotz,W., Johnson,N.M. Trans Tech Publications	9 Conference Proceedings Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy Fujimaki, M., Ono, Rudi, Kushibe, M., Masahara, K., Kojima, K., Shinohe, T., Okushi, H., Arai, K. Trans Tech Publications
4 Conference Proceedings Structural Defects in Heteroepitaxial and Homoepitaxial GaN Lillental-Weber, Zuzanna, Ruvimov, S., Kisielowski, Ch., Chen, Y., Swider, W., Washburn, J., Newman, N., Gassmann, A., … MRS - Materials Research Society	10 Conference Proceedings Observation of Deep Levels in SiC by Optical-Isothermal Capacitance Transient Spectroscopy Kobayashi, S., Imai, S., Hayami, Y., Kushibe, M., Shinohe, T., Okushi, H. Trans Tech Publications
5 Conference Proceedings Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy Fujimaki, M., Ono, R., Kushibe, M., Masahara, K., Kojima, K., Shinohe, T., Okushi, H., Arai, K. Trans Tech Publications	11 Conference Proceedings Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates Gassoumi, M., Sghaier, N., Dermoul, I., Chekir, F., Maaref, H., Bluet, J.M., Guillot, G., Morvan, E., Noblanc, O., Dua, … Trans Tech Publications
6 Conference Proceedings POINT DEFECTS IN GALLIUM ARSENIDE CHARACTERIZED BY POSITRON ANNIHILATION SPECTROSCOPY AND DEEP LEVEL TRANSIENT SPECTROSCOPY Mih, R., Gronsky, R., Dahlen, A., Howell, R. H., Sterne, P. A. MRS - Materials Research Society	12 Conference Proceedings Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS) Ono, R., Fujimaki, M., Senzaki, J., Tanimoto, S., Shinohe, T., Okushi, H., Arai, K. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12