Deep Impurities in AlGaAs Grown by MOCVD Using Different Hydrogen and Nitrogen as Carrier Gases
- Author(s):
- Publication title:
- Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 378
- Pub. Year:
- 1995
- Page(from):
- 153
- Pub. info.:
- Pittsburgh, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992818 [1558992812]
- Language:
- English
- Call no.:
- M23500/378
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Low Deep Impurity InxGa1-xP Grown by Metalorganic Chemical Vapor Deposition
MRS - Materials Research Society |
MRS - Materials Research Society |
2
Conference Proceedings
Very Low Deep Level AlxGa1-xAs (x=0.22) Layer Grown by Metalorganic Chemical Vapor Deposition
MRS - Materials Research Society |
Materials Research Society |
Electrochemical Society |
9
Conference Proceedings
AllnGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE
SPIE-The International Society for Optical Engineering |
4
Conference Proceedings
Use of nitrogen as a carrier gas in LP-MOCVD for growth of GaAs AlGaAs and quantum well infrared photodetectors heterostructures
Society of Photo-optical Instrumentation Engineers |
10
Conference Proceedings
THE USE OF TETRAETHYLTIN AS AN N TYPE DOPANT SOURCE IN GaAs, AlGaAs AND AlAs FOR LASERS AND BRAGG REFLECTORS GROWN BY MOCVD
MRS - Materials Research Society |
5
Conference Proceedings
Comparsion and correlation of VSS simulation results using images from different inspection systems
SPIE-The International Society for Optical Engineering |
Materials Research Society |
SPIE - The International Society for Optical Engineering |
MRS-Materials Research Society |