Computation of the Onset of Point Defect Aggregation in Crystalline Silicon Using an Empirical Interatomic Potential

Computation of the Onset of Point Defect Aggregation in Crystalline Silicon Using an Empirical Interatomic Potential

Author(s):

Publication title:

Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

378

Pub. Year:

1995

Page(from):

95

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992818 [1558992812]

Language:

English

Call no.:

M23500/378

Type:

Conference Proceedings

Details

TDL ID:	ZA00017050
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defect and impurity engineered semiconductors and devices
Conf. info. (Number):	1995
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1995.04.17-1995.04.21

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