LATTICE PROPERTIES OF Ge AND GaAs STRAINED-LAYERS ON Si

LATTICE PROPERTIES OF Ge AND GaAs STRAINED-LAYERS ON Si

Author(s):

Publication title:

Thin films, stresses and mechanical properties V : symposium held November 28-December 2, 1994, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

356

Pub. Year:

1995

Page(from):

295

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992573 [155899257X]

Language:

English

Call no.:

M23500/356

Type:

Conference Proceedings

Details

TDL ID:	ZA00017048
Series ID:	PA00000011
Conf. info. (Name):	Symposium on thin films
Conf. info. (Number):	5th
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1994.11.28-1994.12.02

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