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Room Temperature Defect Etching of III-V Compounds and AIloys Grown on Si Substrate Using Hydrogen Fluoride and Nitric Acid

Author(s):
Publication title:
Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995
Title of ser.:
Materials science forum
Ser. no.:
196-201
Pub. Year:
1995
Pt.:
4
Page(from):
1923
Page(to):
1926
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497164 [0878497161]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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