Quantum Yield of Band-Edge Emission between 77 and 300 K of Undoped and Nitrogest-Doped ZnSe Epilayers Grown by MOVPE

Quantum Yield of Band-Edge Emission between 77 and 300 K of Undoped and Nitrogest-Doped ZnSe Epilayers Grown by MOVPE

Author(s):

Gurskii,A.L.

Publication title:

II-VI compounds and semimagnetic semiconductors : joint proceedings of the Third European Workshop on II-VI Compounds, Linz, Austria, 26-28 September 1994, and the Fourth International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors, Linz, Austria, 26-28 September 1994

Title of ser.:

Materials science forum

Ser. no.:

182-184

Pub. Year:

1995

Page(from):

243

Page(to):

246

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496891 [0878496890]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00016966
Series ID:	PA00000012
Conf. info. (Name):	European Workshop on II-VI Compounds ; International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors
Conf. info. (Number):	3rd ; 4th
Conf. info. (Venue):	Linz, Austria
Conf. info. (Date):	1994.09.26-1994.09.28

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