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Enhanced poly gate critical dimension control by using a SiOxNy ARC film

Author(s):
Bencher,C ( Applied Materials Southeast Asia Pte. Ltd. (Singapore) )
Chu,T. ( Applied Materials Southeast Asia Pte. Ltd. (Singapore) )
Tan,W.T. ( Applied Materials Southeast Asia Pte. Ltd. (Singapore) )
Zou,G. ( Applied Materials Southeast Asia Pte. Ltd. (Singapore) )
Lin,Q.Y. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) )
Yi,X. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) )
Dong,W. X. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) )
Wen,M. W. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) )
3 more
Publication title:
Microlithographic Techniques in IC Fabrication
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3183
Pub. Year:
1997
Page(from):
255
Page(to):
262
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819426109 [0819426105]
Language:
English
Call no.:
P63600/3183
Type:
Conference Proceedings

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