Nanoscale Characterization of Defects and Dopants in Semiconductors: The Transmission Electron Microscope as an In-Situ Laboratory for Electronic Materials Research

Nanoscale Characterization of Defects and Dopants in Semiconductors: The Transmission Electron Microscope as an In-Situ Laboratory for Electronic Materials Research

Author(s):: Robert Hull
Publication title:: Physics of - Semiconductor Devices -
Title of ser.:: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:: 3316
Pub. Year:: 1998
Vol.:: Part 2
Page(from):: 1093
Page(to):: 1098
Pub. info.:: New Delhi: Narosa Publishing House
ISSN:: 0277786X
ISBN:: 9780819427564 [081942756X]
Language:: English
Call no.:: P63600/3316
Type:: Conference Proceedings

Details

TDL ID:	ZA00016921
Series ID:	PA00000029
Conf. info. (Name):	International Workshop on the Physics of Semiconductor Devices - IWDPSD
Conf. info. (Number):	1997 : 9th
Conf. info. (Venue):	Delhi, India
Conf. info. (Date):	1997.12.16-1997.12.20

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